Crystallization Kinetics of Amorphous In44 Sb20 Te36 Phase-Change Optical Recording Films on a Nanosecond Scale
ZHANG Xue-Ru1 , WUTTIG Mattias2
1 Department of Physics, Harbin Institute of Technology, Harbin 150001
2 Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany
Crystallization Kinetics of Amorphous In44 Sb20 Te36 Phase-Change Optical Recording Films on a Nanosecond Scale
ZHANG Xue-Ru1 ;WUTTIG Mattias2
1 Department of Physics, Harbin Institute of Technology, Harbin 150001
2 Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany
关键词 ：
42.70.Gi ,
64.70.Kb ,
78.66.Jg
Abstract ： We propose a simple method to investigate the crystallization kinetics of amorphous In44 Sb20 Te36 films on a nanosecond scale, based on local reflectivity measurements of the nanosecond laser-induced crystallization using a static tester. The pulse condition in terms of laser power and pulse width required for the onset of crystallization is established. Applying this pulse condition and Kissinger's analysis, an activation energy of 0.57 eV is estimated for the crystallization. This value deviates substantially from the activation energy determined at lower sample temperatures where crystallization proceeds in a time scale of seconds rather than nanoseconds.
Key words ：
42.70.Gi
64.70.Kb
78.66.Jg
出版日期: 2004-06-01
引用本文:
ZHANG Xue-Ru;WUTTIG Mattias. Crystallization Kinetics of Amorphous In44 Sb20 Te36 Phase-Change Optical Recording Films on a Nanosecond Scale[J]. 中国物理快报, 2004, 21(6): 1096-1099.
44 Sb20 Te36 Phase-Change Optical Recording Films on a Nanosecond Scale. Chin. Phys. Lett., 2004, 21(6): 1096-1099.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2004/V21/I6/1096
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2004, Vol. 21 
