Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode
NIU Jun1,2, YANG Zhi1, CHANG Ben-Kang1
1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004
Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs Photocathode
NIU Jun1,2, YANG Zhi1, CHANG Ben-Kang1
1Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942Department of Electronic and Electric Engineering, Nanyang Institute of Technology, Nanyang 473004
摘要The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.
Abstract:The mathematical expression of the electron diffusion and drift length LDE of exponential doping photocathode is deduced. In the quantum efficiency equation of the reflection-mode uniform doping cathode, substituting LDE for LD, the equivalent quantum efficiency equation of the reflection-mode exponential doping cathode is obtained. By using the equivalent equation, theoretical simulation and experimental analysis shows that the equivalent index formula and formula-doped cathode quantum efficiency results in line. The equivalent equation avoids complicated calculation, thereby simplifies the process of solving the quantum efficiency of exponential doping photocathode.
[1] Beauvais Y, Chautemps J and Groot P D 1995 Adv.Electron. Electron Phys. A 64 267 [2] Pollehn H K 1995 Adv. Electron. Electron Phys. A 64 61 [3] Zou J J, Chang B K, Yang Z, Du X Q, Gao P and Qiao J L2007 Chin. Phys. Lett. 24 1731 [4] Yao Y P, Liu C L, Qiao Z L, Li M, Gao X and Bo B X 2008 Chin. Phys. Lett. 25 1071 [5] Estrera J P, Bender E J et al 2000 Proc. SPIE 4128 46 [6] Liu Y Z, Wang Z C, and Dong Y Q 1995 ElectronEmission and Photocathode (Beijing: Beijing University of Scienceand Technology) (in Chinese) [7] Du X Q, Chang B K and Zou J J 2005 Acta Opt Sin. 25 1411 (in Chinese) [8] Zou J J, Chang B K and Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [9] Liu Y Z, Hollish C D and Stein W W 1973 J. Appl.Phys. 44 5619 [10] Fisher D G and Olsen G H 1979 J. Appl. Phys. 50 2930 [11] Enstrom R E and Fisher D G. 1975 J. Appl. Phys. 46 1976 [12] Liu E K, Zhu B S, and Luo J S 2003 SemiconductingPhysics (Beijing: Publishing House of Electronics Industry) (inChinese)