Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride
YAN Wei-Xia**, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride
YAN Wei-Xia**, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang
State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
摘要Chemical mechanical polishing (CMP) of amorphous Ge2Sb2Te5 (GST) is studied using aqueous solutions of iron trichloride (FeCl3) as possible abrasive-free slurries. The polishing performance of abrasive-free solutions is compared with abrasive-containing (3wt% colloidal silica) slurry in terms of polishing rate and surface quality. The experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface quality. In order to further investigate the polishing mechanism, post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron spectroscopy. Finally, it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.
Abstract：Chemical mechanical polishing (CMP) of amorphous Ge2Sb2Te5 (GST) is studied using aqueous solutions of iron trichloride (FeCl3) as possible abrasive-free slurries. The polishing performance of abrasive-free solutions is compared with abrasive-containing (3wt% colloidal silica) slurry in terms of polishing rate and surface quality. The experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface quality. In order to further investigate the polishing mechanism, post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron spectroscopy. Finally, it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.
(Extensional flow and combined shear and extension)
引用本文:
YAN Wei-Xia**, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang. Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride[J]. 中国物理快报, 2012, 29(3): 38301-038301.
YAN Wei-Xia, WANG Liang-Yong, ZHANG Ze-Fang, HE Ao-Dong, ZHONG Min, LIU Wei-Li, WU Liang-Cai, SONG Zhi-Tang. Chemical Mechanical Polishing of Ge2Sb2Te5 Using Abrasive-Free Solutions of Iron Trichloride. Chin. Phys. Lett., 2012, 29(3): 38301-038301.
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