Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire
YAN Wei-Xia1,2, ZHANG Ze-Fang1, GUO Xiao-Hui1, LIU Wei-Li1**, SONG Zhi-Tang1
1State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050 2University of Chinese Academy of Sciences, Beijing 100049
Abstract：Effects of abrasive concentration on material removal rate (MRR) and surface quality in the chemical mechanical polishing (CMP) of light-emitting diode sapphire substrates are investigated. Experimental results show that the MRR increases linearly with the abrasive concentration, while the rms roughness decreases with the increasing abrasive concentration. In addition, the in situ coefficient of friction (COF) is also conducted during the sapphire polishing process. The results present that COF increases sharply with the abrasive concentration up to 20 wt% and then shows a slight decrease from 20 wt% to 40 wt%. Temperature is a product of the friction force that is proportional to COF, which is an indicator for the mechanism of the sapphire CMP.
(Extensional flow and combined shear and extension)
引用本文:
. [J]. 中国物理快报, 2015, 32(08): 88301-088301.
YAN Wei-Xia, ZHANG Ze-Fang, GUO Xiao-Hui, LIU Wei-Li, SONG Zhi-Tang. Effect of Abrasive Concentration on Chemical Mechanical Polishing of Sapphire. Chin. Phys. Lett., 2015, 32(08): 88301-088301.
2015, Vol. 32 
