Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Physics, Tsinghua University, Beijing 100084
Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Physics, Tsinghua University, Beijing 100084
摘要InAs/GaSb type-II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition. Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like (plane of mixed As and Sb atoms that connect the GaSb and InAs layers) interfaces. Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers. X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.
Abstract：InAs/GaSb type-II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition. Raman scattering spectroscopy reveals that it is possible to grow superlattices with almost pure GaAs-like and mixed-like (plane of mixed As and Sb atoms that connect the GaSb and InAs layers) interfaces. Introducing the InSb-like interface results in nanopipes and As contamination of the GaSb layers. X-ray diffraction and atomic force microscopy demonstrate that the superlattices with a mixed-like interface have better morphology and crystalline quality.
LI Li-Gong;LIU Shu-Man**;LUO Shuai;YANG Tao;WANG Li-Jun;LIU Feng-Qi;YE Xiao-Ling;XU Bo;WANG Zhan-Guo
. Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. 中国物理快报, 2011, 28(11): 116802-116802.
LI Li-Gong, LIU Shu-Man**, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo
. Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition. Chin. Phys. Lett., 2011, 28(11): 116802-116802.
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2011, Vol. 28 
