Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs
LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Physics, Tsinghua University, Beijing 100084
Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs
LI Li-Gong1,2, LIU Shu-Man1**, LUO Shuai1, YANG Tao1, WANG Li-Jun1, LIU Feng-Qi1, YE Xiao-Ling1, XU Bo1, WANG Zhan-Guo1
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Department of Physics, Tsinghua University, Beijing 100084
摘要InAs/GaSb type-II superlattices (SLs), Zn-doped GaSb and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition. X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples. The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is p∝[DEZn]0.57. The electron concentration in InAs does not show good linearity with the SiH4 flow rate. The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases, while the growth rate of the n-InAs epilayer is weakly dependent on the SiH4 flow rate.
Abstract：InAs/GaSb type-II superlattices (SLs), Zn-doped GaSb and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition. X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples. The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is p∝[DEZn]0.57. The electron concentration in InAs does not show good linearity with the SiH4 flow rate. The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases, while the growth rate of the n-InAs epilayer is weakly dependent on the SiH4 flow rate.
LI Li-Gong, LIU Shu-Man, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo. Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs[J]. 中国物理快报, 2012, 29(7): 76801-076801.
LI Li-Gong, LIU Shu-Man, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo. Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs. Chin. Phys. Lett., 2012, 29(7): 76801-076801.
2012, Vol. 29 
