Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies
LU Xue-Hui1, KANG Lin1, ZHOU Lei1, CHEN Jian1, JI Zheng-Ming1, CAO Chun-Hai1, JIN Biao-Bing1, XU Wei-Wei1, WU Pei-Heng1, WANG Xiao-Shu2
1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Center for Materials Analysis, Nanjing University, Nanjing 210093
Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies
LU Xue-Hui1, KANG Lin1, ZHOU Lei1, CHEN Jian1, JI Zheng-Ming1, CAO Chun-Hai1, JIN Biao-Bing1, XU Wei-Wei1, WU Pei-Heng1, WANG Xiao-Shu2
1Research Institute of Superconductor Electronics (RISE), Department of Electronic Science and Engineering, Nanjing University, Nanjing 2100932Center for Materials Analysis, Nanjing University, Nanjing 210093
摘要Niobium is sputtered onto a single crystalline silicon substrate in N2:Ar=4:1 gas mixture at the total pressure of 2Pa. The temperature coefficient of resistance of the sample is about 0.5% at 300K, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2μm×2μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb3+ and Nb5+, or Nb4+.
Abstract：Niobium is sputtered onto a single crystalline silicon substrate in N2:Ar=4:1 gas mixture at the total pressure of 2Pa. The temperature coefficient of resistance of the sample is about 0.5% at 300K, and up to 7% at 77K, indicating the possibility of using it to make room-temperature bolometers with performances better than those based on Pt, Bi, or Nb. For a 60-nm-thick sample, the rms surface roughness is 0.45nm over an area of 2μm×2μm. Analyses based on x-ray diffraction and x-ray photoelectronic spectroscopy indicate that the samples are Nb5N6 thin films in which there is a combination of Nb3+ and Nb5+, or Nb4+.
LU Xue-Hui;KANG Lin;ZHOU Lei;CHEN Jian;JI Zheng-Ming;CAO Chun-Hai;JIN Biao-Bing; XU Wei-Wei;WU Pei-Heng;WANG Xiao-Shu. Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies[J]. 中国物理快报, 2008, 25(11): 4076-4078.
LU Xue-Hui, KANG Lin, ZHOU Lei, CHEN Jian, JI Zheng-Ming, CAO Chun-Hai, JIN Biao-Bing, XU Wei-Wei, WU Pei-Heng, WANG Xiao-Shu. Growth and Characterization of a Kind of Nitrogen-Rich Niobium Nitride for Bolometer Applications at Terahertz Frequencies. Chin. Phys. Lett., 2008, 25(11): 4076-4078.
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2008, Vol. 25 
