Growth and Characterization of InAs1?xSbx with Different Sb Compositions on GaAs Substrates
SUN Qing-Ling1,2, WANG Lu1,2,3**, WANG Wen-Qi1,2, SUN Ling1,2, LI Mei-Cheng3, WANG Wen-Xin1,2, JIA Hai-Qiang1,2, ZHOU Jun-Ming1,2, CHEN Hong1,2
1Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 2Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condense Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 3State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, School of Renewable Energy, North China Electric Power University, Beijing 102206
Abstract：InAs1?xSbx with different compositions is grown by molecular beam epitaxy on (100)-oriented semi-insulating GaAs substrates. The increase of Sb content in the epilayer results in the deterioration of crystal quality and surface morphology. Hall measurements show that the carrier concentration increases with the composition of Sb. The electron mobility decreases initially, when Sb composition exceeds a certain value, and the mobility increases slightly. In this work, we emphasize the comparison of crystal quality, surface morphology and electrical properties of epilayers with different Sb compositions.
. [J]. 中国物理快报, 2015, 32(10): 106801-106801.
SUN Qing-Ling, WANG Lu, WANG Wen-Qi, SUN Ling, LI Mei-Cheng, WANG Wen-Xin, JIA Hai-Qiang, ZHOU Jun-Ming, CHEN Hong. Growth and Characterization of InAs1?xSbx with Different Sb Compositions on GaAs Substrates. Chin. Phys. Lett., 2015, 32(10): 106801-106801.
2015, Vol. 32 
