1Material School, NorthWest Polytechnical University, Xi'an 7100002Luoyang Optical Electronic Center, PO Box 030, Luoyang 4710093Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
1Material School, NorthWest Polytechnical University, Xi'an 7100002Luoyang Optical Electronic Center, PO Box 030, Luoyang 4710093Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
摘要Short period InAs(4ML)/GaSb(8ML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.
Abstract：Short period InAs(4ML)/GaSb(8ML) superlattices (SLs) with InSb- and mixed-like (or Ga1-xInxAs1-ySby-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature. Raman scattering reveals that two kinds of IFs can be formed by controlling shutter sequences. X-ray diffraction (XRD) and atomic force microscopy (AFM) demonstrate that SLs with mixed-like IFs are more sensitive to growth temperature than that with InSb-like IFs. The photoluminescence (PL) spectra of SLs with mixed-like IFs show a stronger intensity and narrower line width than with InSb-like IFs. It is concluded that InAs/GaSb SLs with mixed-like IFs have better crystalline and optical properties.
[1] Tian Z B, Gu Y, Wang K and Zhang Y G 2008 Chin. Phys.Lett. 26 2292 [2] Zhang Y G, Hao G Q, Gu Y, Zhu C, LI A Z and Liu T D 2005 Chin. Phys. Lett. 22 250 [3] Fuchs F, Weimar U, Pletschen W, Schmitz J, Ahlswede E,Walther M, Wagner J and Koidl P 1997 Appl. Phys. Lett. 71 3251 [4] Rogalski A, Martyniuk P 2006 Infrared Phys. Technol. 48 39 [5] Herres N, Fuchs F, Schmitz J, Pavlov K M, Wagner J,Ralston J D and Koidl P 1996 Phys. Rev. B 53 15688 [6] Tomich D H, Mitchel W C, Chow P and Tu C W 1999 J.Cryst. Growth. 210 868 [7] Bracker A S, Yang M J, Bennett B R, Culbertson J C andMoore W J 2000 J. Crystal Growth 220 384 [8] Chow D H, Miles R H and Hunter A T 1992 J. Vac. Sci.Technol. B 10 888 [9] Waterman J R, Shanabrook B V, Wagner R J, Yang M J, DavisJ L and Omaggio J P 1993 Semicond. Sci. Technol. 8 106 [10] Canedy C L, W Bewley W, Kim C S, Kim M, Vurgaftman I andMeyer J R 2003 J. Appl. Phys. 94 1347
2009, Vol. 26 
