Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice
GU Yi1,2, ZHANG Yong-Gang1, LI Ai-Zhen1, WANG Kai1,2, LI Cheng1,2, LI Yao-Yao1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049
Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice
GU Yi1,2, ZHANG Yong-Gang1, LI Ai-Zhen1, WANG Kai1,2, LI Cheng1,2, LI Yao-Yao1
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 2000502Graduate School of the Chinese Academy of Sciences, Beijing 100049
摘要The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InAlAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfectness. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.
Abstract：The effects of strain compensation are investigated by using twenty periods of highly strain-compensated InGaAs/InAlAs superlattice. The lattice mismatches of individual layers are as high as about 1%, and the thicknesses are close to critical thicknesses. X-ray diffraction measurements show that lattice imperfectness is not serious but still present, though the structural parameters are within the range of theoretical design criteria for structural stability. Rough interfaces and composition fluctuations are the primary causes for lattice imperfectness. Photoluminescence measurements show the large thermally activated nonradiative recombination in the sample. In addition, the recombination process gradually evolves from excitonic recombination at lower temperatures to band-to-band recombination at higher temperatures, which should be considered in device applications.
[1] Jackson E M, Weaver B D, Shojah-Ardalan S, Wilkins R,Seabaugh A C and Brar B 2001 Appl. Phys. Lett. 79 2279 [2] Yang Q K and Li A Z 1998 J. Cryst. Growth 19431 [3] Wang Y C, Tyan S L and Juang Y D 2002 J. Appl. Phys. 92 920 [4] Kim G, Kim I G, Baek J H and Kwon O K 2003 Appl.Phys. Lett. 83 1249 [5] Choo D C, Kim T W, Yoo K H, Meining C J and McCombe B D2003 J. Appl. Phys. 94 7621 [6] Evans A, Razeghi M 2006 Appl. Phys. Lett. 88261106 [7] Ido T, Sano H, Tanaka S, Moss D J and Inoue H 1996 J.Lightwave Tech. 14 2324 [8] Miller B, Koren U, Young M G and Chien M D 1991 Appl.Phys. Lett. 58 1952 [9] Chung H Y, Stareev G, Joos J, Golling M, M\"{ahn$\beta $J and Ebeling K 1999 J. Cryst. Growth 201--202 909 [10] Houghton D C, Davies M and Dion M 1994 Appl. Phys.Lett. 64 505 [11] Marschner T, Lutgen S, Volk M, Stolz W and G\"{obel E O1996 Appl. Phys. Lett. 69 2249 [12] Fewster P F 1993 Semicond. Sci. Technol. 81915 [13] Huang Z C, Wu H Z, Lao Y F, Cao M and Liu C 2005 J.Crystal Growth 281 255 [14] Shen W Z, Shen S C, Tang W G, Zhao Y and Li A Z 1995 J. Appl. Phys. 78 5696 [15] Lei H P, Wu H Z, Lao Y F, Qi M, Li A Z and Shen W Z 2003 J. Cryst. Growth 256 96 [16] Varshni Y P 1967 Physica 34 149 [17] Pearsall T P, Carles R and Portal 1983 Appl. Phys.Lett. 42 436 [18] Iyer S, Hegde S, Fadl A A, Bajaj K K and Mitchel W 1993 Phys. Rev. B 47 1329
2009, Vol. 26 
