Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer
Wuhan National Laboratory for Optoelectronics, College of Opto-electronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074
摘要Long-wavelength GaN based light-emitting diodes are of importance in full color displays, monolithic white light-emitting diodes and solid-state lighting, etc. However, their epitaxial growth faces great challenges because high indium (In) compositions of InGaN are difficult to grow. In order to enhance In incorporation and lengthen the emission wavelength of a InGaN/GaN multi-quantum well (MQW), we insert an InGaN underlying layer underneath the MQW. InGaN/GaN MQWs with various InGaN underlying layers, such as graded InyGa1-yN material with linearly increasing In content, or InyGa1-yN with fixed In content but different thicknesses, are grown by metal-organic chemical vapor deposition. Experimental results demonstrate the enhancement of In incorporation and the emission wavelength redshift by the insertion of an InGaN underlying layer.
Abstract：Long-wavelength GaN based light-emitting diodes are of importance in full color displays, monolithic white light-emitting diodes and solid-state lighting, etc. However, their epitaxial growth faces great challenges because high indium (In) compositions of InGaN are difficult to grow. In order to enhance In incorporation and lengthen the emission wavelength of a InGaN/GaN multi-quantum well (MQW), we insert an InGaN underlying layer underneath the MQW. InGaN/GaN MQWs with various InGaN underlying layers, such as graded InyGa1-yN material with linearly increasing In content, or InyGa1-yN with fixed In content but different thicknesses, are grown by metal-organic chemical vapor deposition. Experimental results demonstrate the enhancement of In incorporation and the emission wavelength redshift by the insertion of an InGaN underlying layer.
HUANG Li-Rong;WEN Feng;TONG Liang-Zhu;HUANG De-Xiu. Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer[J]. 中国物理快报, 2009, 26(7): 78502-078502.
HUANG Li-Rong, WEN Feng, TONG Liang-Zhu, HUANG De-Xiu. Wavelength Red-Shift of Long Wavelength InGaN/GaN Multi-Quantum Well by Using an InGaN Underlying Layer. Chin. Phys. Lett., 2009, 26(7): 78502-078502.
[1] Xiao D, Kim K. W, Bedair S M and Zavada J M 2004 Appl. Phys. Lett. 84 672 [2] Ho I and Stringfellow G B 1996 Appl. Phys. Lett. 69 2701 [3] Oh M S, Kwon M K, Park I K, Baek S H, Park S J, Lee S Hand Jung J J 2006 J. Cryst. Growth 289 107 [4] Kim T K, Shim S K, Yang S S, Son J K, Hong Y K and Yang GM 2007 Current Appl. Phys. 7 469 [5] Liu C H, Su Y K, Wen T C, Chang S J and Chuang R W 2003 J. Cryst. Growth 254 336 [6] Lin H C, Lin R S and Chyi J I 2008 Appl. Phys. Lett. 92 161113 [7] Huang C F, Tang T Y, Huang J J, Shiao W Y, Yang C C, Hsu CW and Chen L C 2006 Appl. Phys. Lett. 89 051913 [8] Johnson M C, Bourret-Courchesne E D, Wu Z J,Liliental-Weber, Zakharov D N, Jorgenson R J, Ng T B, McCready D Eand Williams J R 2004 J. Appl. Phys. 96 1381 [9] Li S F, Schromann J, Pawlis A, As D J and Lischa K 2004 13th International Conference on Semiconducting and InsulatingMaterials SIMC-XIII-2004 p 61
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