摘要Carrier mobility enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.
Abstract：Carrier mobility enhancement from 0.09 to 0.59cm2/Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski-Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility.
[1] Cavallini M, Stoliar P, Moulin J, Surin M, Leclere P,Lazzaroni R, Breiby D W, Andreasen J W, Nielsen M M, Sonar P,Grimsdale A C, Mullen K, and Biscarini F 2005 Nano. Lett. 5 2422 [2] Dimitrakopoulos C D, Kymissis I, Purushothaman S, NeumayerD A, Duncombe P R and Laibowitz R B 1999 Adv. Mater. 111372 [3] Jeong Y T and Dodabalapur A 2007 Appl. Phys. Lett. 91 193509 [4] Wang J, Yan X J, Yu Y X, Zhang J and Yan D H 2004 Appl. Phys. Lett. 85 5424 [5] Kim C S, Jo S J, Lee S W, Kim W J, Baik H K and Lee S J2007 Adv. Funct. Mater. 17 958 [6] Zhao Y H, Dong G F, Wang L D and Qiu Y 2007 Chin.Phys. Lett. 24 1664 [7] Kelley T W, Muyres D V, Baude P F, Smith T P and Jones T D2003 Mater. Res. Soc. Symp. Proc. 771 169 [8] Horowitz G and Hajlaoui M E 2000 Adv. Mater. 12 1046 [9] Verlaak S, Rolin C and Heremans P 2007 J. Phys.Chem. B 111 139 [10] Verlaak S and Heremans P 2007 Phys. Rev. B 75115127 [11] Ruiz R, Papadimitratos A, Alex C and Malliaras G G 2005 Adv. Mater. 17 1795 [12]Gulla A F, Saha M S, Allen R J and Mukerjee S 2006 J.Electrochem. Soc. 153 A366 [13] Katz H E 2004 Chem. Mater. 16 4748 [14] Fritz S E, Kelley T W and Frisbie C D 2005 J. Phys.Chem. B 109 10574 [15] Soeren S, Vusser S D, Jonge S D, Janssen D, Verlaak S,Genoe J and Heremans P 2004 Appl. Phys. Lett. 85 4400 [16] Yang S Y, Shin K and Park C E 2005 Adv. Mater. 15 1806 [17] Smith D L 1995 Thin-Film Deposition: Principles andPractice (New York: McGraw-Hill) chap 5 [18] Deman A L, Erouel M, Lallemand D, Phaner-Goutorbe M, LangP and Tardy J 2008 J. Non-Cryst. Solids 354 1598
2009, Vol. 26 
