摘要InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.
Abstract：InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.
DONG Xun;LI Zhong-Hui;LI Zhe-Yang;ZHOU Jian-Jun;LI Liang;LI Yun;ZHANG Lan;XU Xiao-Jun;XU Xuan;HAN Chun-Lin. Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures[J]. 中国物理快报, 2010, 27(3): 37102-037102.
DONG Xun, LI Zhong-Hui, LI Zhe-Yang, ZHOU Jian-Jun, LI Liang, LI Yun, ZHANG Lan, XU Xiao-Jun, XU Xuan, HAN Chun-Lin. Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures. Chin. Phys. Lett., 2010, 27(3): 37102-037102.
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2010, Vol. 27 
