Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric
YANG Lu
National Key Laboratory for Electronic Measurement Technology, School of Information and Communication Engineering, North University of China, Taiyuan 030051
Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric
YANG Lu
National Key Laboratory for Electronic Measurement Technology, School of Information and Communication Engineering, North University of China, Taiyuan 030051
Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8× 10-16 cm2 and 1.0× 1016 cm-3, respectively.
Deep-trap properties of high-dielectric-constant (k) HfO2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300-500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8× 10-16 cm2 and 1.0× 1016 cm-3, respectively.
YANG Lu. Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric[J]. 中国物理快报, 2010, 27(7): 77102-077102.
YANG Lu. Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO2 Dielectric. Chin. Phys. Lett., 2010, 27(7): 77102-077102.
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2010, Vol. 27 
