2010, Vol. 27(3): 37102-037102    DOI: 10.1088/0256-307X/27/3/037102
	Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures
	DONG Xun, LI Zhong-Hui, LI Zhe-Yang, ZHOU Jian-Jun, LI Liang, LI Yun, ZHANG Lan, XU Xiao-Jun, XU Xuan, HAN Chun-Lin
	National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016
	收稿日期 2009-11-06  修回日期 1900-01-01
	Supporting info
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