Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate
YOU Feng1, WANG Zheng1, XIE Qing-Lian1,2, JI Lu1, YUE Hong-Wei1, ZHAO Xin-Jie1, FANG Lan1, YAN Shao-Lin1
1Department of Electronic Science and Technology, Nankai University,Tianjin 3000712College of Physics and Electronic Engineering, Guangxi TeachersEducation University, Nanning 530001
Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate
YOU Feng1, WANG Zheng1, XIE Qing-Lian1,2, JI Lu1, YUE Hong-Wei1, ZHAO Xin-Jie1, FANG Lan1, YAN Shao-Lin1
1Department of Electronic Science and Technology, Nankai University,Tianjin 3000712College of Physics and Electronic Engineering, Guangxi TeachersEducation University, Nanning 530001
The double-side Tl2Ba2CaCu2O8 (Tl-2212) superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Tl-2212 thin films on CeO2 buffered sapphire substrates were fabricated by a dc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the c-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106 K, the critical current density Jc is around 3.5 MA/cm2 at 77 K, and the microwave surface resistance Rs at 77 K and 10 GHz of the film is as low as 390 μΩ
The double-side Tl2Ba2CaCu2O8 (Tl-2212) superconducting thin films were fabricated on CeO2 buffered sapphire substrates. The reactive magnetron sputtering technique was used to grow CeO2 buffer thin films on sapphire substrates. Making use of the metal cerium as a sputtering source, the depositing rate is much higher compared with the CeO2 target. The Tl-2212 thin films on CeO2 buffered sapphire substrates were fabricated by a dc magnetron sputtering and post-annealing process. The x-ray diffraction indicates that the thin film is pure Tl-2212 phase with the c-axis perpendicular to the substrate surfaces, and epitaxially grown on the CeO2 buffered sapphire. The critical transition temperature Tc is around 106 K, the critical current density Jc is around 3.5 MA/cm2 at 77 K, and the microwave surface resistance Rs at 77 K and 10 GHz of the film is as low as 390 μΩ
YOU Feng;WANG Zheng;XIE Qing-Lian;JI Lu;YUE Hong-Wei;ZHAO Xin-Jie;FANG Lan;YAN Shao-Lin. Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate[J]. 中国物理快报, 2010, 27(4): 47401-047401.
YOU Feng, WANG Zheng, XIE Qing-Lian, JI Lu, YUE Hong-Wei, ZHAO Xin-Jie, FANG Lan, YAN Shao-Lin. Fabrication and Properties of Double-Side Tl2Ba2CaCu2O8 Thin Film on CeO2 Buffered Sapphire Substrate. Chin. Phys. Lett., 2010, 27(4): 47401-047401.
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2010, Vol. 27 
