Crystal Tilts in Epitaxially Laterally Overgrown GaN Films
Determined by Four-Circle X-Ray Diffraction
WANG Feng，ZHANG Rong, CHEN Zhi-Zhong, WU Xiao-Shan, GU Shu-Lin, SHEN Bo, ZHENG You-Dou, JIANG Shu-Sheng
Department of Physics and National Laboratoy of Solid State
Microstructures, Nanjing University, Nanjing 210093
Crystal Tilts in Epitaxially Laterally Overgrown GaN Films
Determined by Four-Circle X-Ray Diffraction
WANG Feng，ZHANG Rong;CHEN Zhi-Zhong;WU Xiao-Shan;GU Shu-Lin;SHEN Bo;ZHENG You-Dou;JIANG Shu-Sheng
Department of Physics and National Laboratoy of Solid State
Microstructures, Nanjing University, Nanjing 210093
关键词 ：
68.55.Jk ,
61.10.-i
Abstract ： Crystal tilts in epitaxially laterally overgrown (ELO) GaN films via hydride vapor phase epitaxy (HVPE) on sapphire substrates have been investigated by using four-circle x-ray diffraction method. Three diffraction peaks corresponding to the (0002) reflection of vertically epitaxial and tilted GaN domains are observable in the x-ray rocking curve. The angle separations Δω between the main peak and two lobes change with the azimuth angle Ф. The dependence of Δω on Ф and the crystal tilt angle θ has been calculated based on the standard kinetic x-ray diffraction model. The crystal tilt angle of a typical HVPE ELO GaN sample has been determined to be 2.379°C.
Key words ：
68.55.Jk
61.10.-i
出版日期: 2001-06-01
引用本文:
WANG Feng;ZHANG Rong;CHEN Zhi-Zhong;WU Xiao-Shan;GU Shu-Lin;SHEN Bo;ZHENG You-Dou;JIANG Shu-Sheng. Crystal Tilts in Epitaxially Laterally Overgrown GaN Films
Determined by Four-Circle X-Ray Diffraction[J]. 中国物理快报, 2001, 18(6): 813-815.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2001/V18/I6/813
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