Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection
WANG Guo-Wei1, XU Ying-Qiang1, GUO Jie2, TANG Bao1, REN Zheng-Wei1, HE Zhen-Hong1, NIU Zhi-Chuan1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Luoyang Opti-electronics Development Center, Luoyang 471009
Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection
WANG Guo-Wei1, XU Ying-Qiang1, GUO Jie2, TANG Bao1, REN Zheng-Wei1, HE Zhen-Hong1, NIU Zhi-Chuan1
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Luoyang Opti-electronics Development Center, Luoyang 471009
InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0μm at 77 K, the peak directivity of the detectors is 1.6× 1010 cm·Hz1/2W-1 at 77 K.
InAs/GaSb superlattice (SL) midwave infrared photovoltaic detectors are grown by molecular beam epitaxy on GaSb(001) residual p-type substrates. A thick GaSb layer is grown under the optimized growth condition as a buffer layer. The detectors containing a 320-period 8ML/8ML InAs/GaSb SL active layer are fabricated with a series pixel area using anode sulfide passivation. Corresponding to 50% cutoff wavelengths of 5.0μm at 77 K, the peak directivity of the detectors is 1.6× 1010 cm·Hz1/2W-1 at 77 K.
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2010, Vol. 27 
