GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy
LU Jian-Ya1,2, ZHENG Xin-He1,3**, WANG Nai-Ming1, CHEN Xi1, LI Bao-Ji1, LU Shu-Long1, YANG Hui1
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 2School of Materials Science and Engineering, Shanghai University, Shanghai 200444 3Department of Physics, College of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083
Abstract：We demonstrate nearly 1 eV GaN0.03As0.97/In0.09Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a photoluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As superlattice solar cells show a reasonably-high short-circuit current density (Jsc) of over 10 mA/cm2. Furthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
. [J]. 中国物理快报, 2015, 32(5): 57301-057301.
LU Jian-Ya, ZHENG Xin-He, WANG Nai-Ming, CHEN Xi, LI Bao-Ji, LU Shu-Long, YANG Hui. GaNAs/InGaAs Superlattice Solar Cells with High N Content in the Barrier Grown by All Solid-State Molecular Beam Epitaxy. Chin. Phys. Lett., 2015, 32(5): 57301-057301.
2015, Vol. 32 
