摘要We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si 1-x IVx/Si/Si (x=0.125, 0.25, 0.5, IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si 0.875 Ge 0.125/Si, Si 0.75 Ge 0.25/Si and Si 0.875 Ge 0.125/Si are the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si 1-x IVx/Si/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.
Abstract：We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si 1-x IVx/Si/Si (x=0.125, 0.25, 0.5, IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si 0.875 Ge 0.125/Si, Si 0.75 Ge 0.25/Si and Si 0.875 Ge 0.125/Si are the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si 1-x IVx/Si/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.
(Electron density of states and band structure of crystalline solids)
引用本文:
CHEN Jie;LÜTie-Yu;HUANG Mei-Chun;. Electronic Structure of Si 1-x IVx/Si Superlattices on Si (001)[J]. 中国物理快报, 2007, 24(3): 811-813.
CHEN Jie, LÜ, Tie-Yu, HUANG Mei-Chun,. Electronic Structure of Si 1-x IVx/Si Superlattices on Si (001). Chin. Phys. Lett., 2007, 24(3): 811-813.
[1] Davis R F 1991 Proc. IEEE 79 702 [2] Edgar J H 1992 J. Mater. Res. 7 235 [3] Eddy J C R, Moustakas T D and Scanlon J 1993 J. Appl.Phys. 73 448 [4] Pearsall T P, Bevk J, Feldman L C, Bonar J M, Mannaerts J P andOurmazd A 1987 Phys. Rev. Lett. 58 729 [5] Froyen S, Wood D M and Zunger A 1988 Phys. Rev. B 37 6893 [6] Venezuela P, Dalpian G M, Silva A J R and Fazzio A 2001 Phys. Rev. B 64 193202 [7] Schmid U, Christensen N E, Alouani M and Cardona M 1991 Phys. Rev. B 43 14597 [8] Cerdeira F, Pinczuk A and Bean J C 1984 Phys. Rev. B 31 1202 [9] Tserbak C, Polatoglou H M and Theodorou G 1993 Phys.Rev. B 47 7104 [10] Willatzen M, Voon L C L Y, Santos P V, Cardona M, Munzar D andChristensen N E 1995 Phys. Rev. B 52 5070 [11] Munzar D and Christensen N E 1994 Phys. Rev. B 49 11238 [12] D\'avila M E, Avila J, Asensio M C and Lay G L 2004 Phys.Rev. B 70 241308 [13] Zhang P H, Crespi V H, Chang E, Louie S G and Cohen M L 2001 Nature 409 69 [14] Horsfield A P and Ashcroft N W 1992 J. Phys. Condens.Matter 4 7333 [15] Johnson K A and Ashcroft N W 1996 Phys. Rev. B 54 14480 [16] Huang M C and Zhu Z Z 2001 The 4th Asian workshop onfirst-principles electronic structure calculations p12 [17] Huang M C, Zhang J L, Li H P and Zhu Z Z 2002 Int. J.Mod. Phys. B 16 4279 [18] Kresse G and Furthm\"uller J 1996 Phys. Rev. B 5411169 [19] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758 [20] Kresse G and Hafner J 1994 J. Phys: Condens. Matter 6 8245 [21] Bean J C, Sheng T T, Feldman L C, Fiory A T and Lynch R T 1984 Appl. Phys. Lett. 44 102 [22] Cerdeira F, Pinczuk A, Bean J C, Batlogg B and Wilson B A 1984 Appl. Phys. Lett. 45 1138 [23] Fiory A T, Bean J C, Feldman L C and Robinson I K 1984 J. Appl. Phys. 56 1227
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