摘要Cr-doped InAs self-organized diluted magnetic quantum dots (QDs) are grown by low-temperature molecular-beam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs:Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400K. High-resolution cross sectional transmission electron microscopy images indicate that InAs:Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.
Abstract：Cr-doped InAs self-organized diluted magnetic quantum dots (QDs) are grown by low-temperature molecular-beam epitaxy. Magnetic measurements reveal that the Curie temperature of all the InAs:Cr QDs layers with Cr/In flux ratio changing from 0.026 to 0.18 is beyond 400K. High-resolution cross sectional transmission electron microscopy images indicate that InAs:Cr QDs are of the zincblende structure. Possible origins responsible for the high Curie temperature are discussed.
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