Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
LIU Jian-Jun1,2, ZHANG Shu-Fang1, KONG Xiao-Jun1,2, LI Shu-Shen2
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
LIU Jian-Jun1,2;ZHANG Shu-Fang1;KONG Xiao-Jun1,2;LI Shu-Shen2
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract: The binding energy of an exciton bound to an ionized donor impurity (D+, X ) located at the center or the edge in GaAs-AIxGal-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.
LIU Jian-Jun;ZHANG Shu-Fang;KONG Xiao-Jun;LI Shu-Shen. Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells[J]. 中国物理快报, 2000, 17(5): 358-359.
LIU Jian-Jun, ZHANG Shu-Fang, KONG Xiao-Jun, LI Shu-Shen. Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells. Chin. Phys. Lett., 2000, 17(5): 358-359.