Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
LIU Jian-Jun1,2, ZHANG Shu-Fang1, KONG Xiao-Jun1,2, LI Shu-Shen2
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells
LIU Jian-Jun1,2;ZHANG Shu-Fang1;KONG Xiao-Jun1,2;LI Shu-Shen2
1Department of Physics, Hebei Normal University, Shijiazhuang 050016
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Abstract： The binding energy of an exciton bound to an ionized donor impurity (D+, X ) located at the center or the edge in GaAs-AIxGal-xAs quantum wells is calculated variationally for the well width from 10 to 300Å by using a two-parameter wave function, The theoretical results are discussed and compared with the previous experimental results.
LIU Jian-Jun;ZHANG Shu-Fang;KONG Xiao-Jun;LI Shu-Shen. Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells[J]. 中国物理快报, 2000, 17(5): 358-359.
LIU Jian-Jun, ZHANG Shu-Fang, KONG Xiao-Jun, LI Shu-Shen. Binding Energy of Ionized-Donor-Bound Excitons in the GaAs-AIxGal-xAs Quant urn Wells. Chin. Phys. Lett., 2000, 17(5): 358-359.
2000, Vol. 17 
