Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces
BAN Da-yan1 , FANG Rong-chuan1 , JI XUE Jian-geng1 , LU Er-dong2 , XU Peng-shou2
1 Department of Physics, 2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces
BAN Da-yan1 ;FANG Rong-chuan1 ;JI XUE Jian-geng1 ;LU Er-dong2 ;XU Peng-shou2
1 Department of Physics, 2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026
关键词 ：
73.20.At
Abstract ： By using synchrotron radiation photoelectron spectroscopy, the band lineup of Ge/CdTe (111) interfaces grown at different temperatures have been measured. Experimental studies show that the valence band offset of Ge/CdTe (111) interface grown at room temperature is 0.88 ± 0.1 eV, which agrees well with previously reported value. While as for the interface grown at 280°C, an obvious reduction of valence band offsets is observed and attributed to sthe effect of different interface dipole.
Key words ：
73.20.At
出版日期: 1997-08-01
:
73.20.At
(Surface states, band structure, electron density of states)
引用本文:
BAN Da-yan;FANG Rong-chuan;JI XUE Jian-geng;LU Er-dong;XU Peng-shou. Effect of Growth Temperature on the Band Lineup of Ge/CdTe(111) Polar Interfaces[J]. 中国物理快报, 1997, 14(8): 609-612.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1997/V14/I8/609
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1997, Vol. 14 
