Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation
YING Zhi-feng, REN Zhong-min, DU Yuan-cheng, LI Fu-ming, LIN Jing1, REN Yun-zhu1, ZONG Xiang-fu1
Department of Physics, and State Key Lab oratory for Materials Modification by Laser, Ion and Electron beams, Fudan University, Shanghai 200433
1Institute of Materials Science, Fudan University, Shanghai 200433
Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation
Department of Physics, and State Key Lab oratory for Materials Modification by Laser, Ion and Electron beams, Fudan University, Shanghai 200433
1Institute of Materials Science, Fudan University, Shanghai 200433
Abstract： In order to obtain high quality carbon nitride films, x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film: (a) laser-ablated amorphous carbon (a-C) films, (b) a-C films after a 1 keV nitrbgen ion beam bombardment. (c) carbon nitride (CNx) films synthesized by ablation assisted with ion beam bombardment, (d) CNx films after a 50eV nitrogen ion beam bombardment, and (e) CNx films after a 1 keV nitrogen ion beam bombardment. The comparison among these films showed that the concurrent deposition of CNx films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment. In the case of concurrent deposited CNx films, a post-treatment by a nitrogen ion beam bombardment with an appropriate energy (possibly less than 1 keV) was proposed to improve the ratio of C-N binding structures in the deposited films.
1996, Vol. 13 
