Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition
LU Xian-Feng, LI Jin-Chai, GUO Huai-Xi, ZHANG Zhi-Hong, YE Ming-Sheng
Department of Physics, Wuhan University, Wuhan 430072
Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition
LU Xian-Feng;LI Jin-Chai;GUO Huai-Xi;ZHANG Zhi-Hong;YE Ming-Sheng
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
79.70.+q ,
81.15.Gh ,
81.15.Jj
Abstract ： CNx thin films were prepared using low pressure plasma enhanced chemical vapor deposition (LP-PECVD), and then bombarded by low energy N+ 2 . The compositions before and after N+ 2 bombardment were compared by using x-ray photoelectron spectroscopy. The electron field emission characteristics of CNx thin films before and after N+ 2 bombardment were studied under the pressure of 10-6 Pa. For the samples, the turn-on emission field decreased from 2.5V/μm to 1.2V/μm while the stable current density increased from 0.5mA/cm2 to a value larger than 1mA/cm2 before and after the bombardment. Our results illustrated that the field emission characteristics were improved after the bombardment of N+ 2 .
Key words ：
79.70.+q
81.15.Gh
81.15.Jj
出版日期: 2002-03-01
:
79.70.+q
(Field emission, ionization, evaporation, and desorption)
81.15.Gh
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
81.15.Jj
(Ion and electron beam-assisted deposition; ion plating)
引用本文:
LU Xian-Feng;LI Jin-Chai;GUO Huai-Xi;ZHANG Zhi-Hong;YE Ming-Sheng. Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition[J]. 中国物理快报, 2002, 19(3): 416-418.
x Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition. Chin. Phys. Lett., 2002, 19(3): 416-418.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y2002/V19/I3/416
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2002, Vol. 19 
