Abstract： A novel characteristic of the junction current drift effect in the Cu/porous silicon (Cu/PS) device prepared by electrodeposition in which Cu ions were deposited on porous silicon is reported. The junction current increases with time and gradually approaches to a saturated value when a certain forward bias is applied on the Cu/PS device. Moreover, after the bias was withdrawn for a period, a different drift process was observed when the same bias was applied again. The drifttime constant and the initial current of latter drift process depend on cut-off time. Such an effect is explained in terms of the model that only part of electrons from porous silicon contributes to the junction current while other electrons are captured by the traps in the interface between Cu and porous silicon in the Cu/PS device.
WANG Guan-zhong;LI Peng;MA Yu-rong;FANG Rong-chuan. Junction Current Drift Effect of the Cu/Porous Si Device Prepared by Electrodeposition[J]. 中国物理快报, 1997, 14(2): 124-126.
WANG Guan-zhong, LI Peng, MA Yu-rong, FANG Rong-chuan. Junction Current Drift Effect of the Cu/Porous Si Device Prepared by Electrodeposition. Chin. Phys. Lett., 1997, 14(2): 124-126.
1997, Vol. 14 
