Plasma Enhanced Chemical Vapor Deposition Synthesizing Carbon Nitride Hard Thin Films
ZHANG Zhi-hong, GUO Huai-xi, MENG Xian-quan, YE Ming-sheng, ZHANG Wei, FAN Xiang-jun
Department of Physics, Wuhan University, Wuhan 430072
Plasma Enhanced Chemical Vapor Deposition Synthesizing Carbon Nitride Hard Thin Films
ZHANG Zhi-hong;GUO Huai-xi;MENG Xian-quan;YE Ming-sheng;ZHANG Wei;FAN Xiang-jun
Department of Physics, Wuhan University, Wuhan 430072
关键词 ：
68.55.Jk ,
68.35.Gy ,
68.35.Md
Abstract ： Using plasma enhanced chemical vapor deposition and SiC and carbon buffer layers, we have obtained carbon nitride thin films on Si(100) and Si(111). The x-ray diffraction and x-ray photoelectron spectroscopy are used to characterize the thin films. The Vickers hardness of the carbon nitride thin films is more than 5100kgf/mm2 and comparable to that of diamond.
Key words ：
68.55.Jk
68.35.Gy
68.35.Md
出版日期: 1998-12-01
引用本文:
ZHANG Zhi-hong;GUO Huai-xi;MENG Xian-quan;YE Ming-sheng;ZHANG Wei;FAN Xiang-jun. Plasma Enhanced Chemical Vapor Deposition Synthesizing Carbon Nitride Hard Thin Films[J]. 中国物理快报, 1998, 15(12): 913-915.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I12/913
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1998, Vol. 15 
