Atomic Force Microscopy on the Ga0.l6In0.84As0.80Sb0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition
GAO Chun-xiao1, LI Shu-wei2, YANG Jie1, LIU Bing-bing1
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
2Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021
Atomic Force Microscopy on the Ga0.l6In0.84As0.80Sb0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition
1State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023
2Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021
Abstract： The atomic force microscopy study was made on the quaternary Ga0.l6In0.84As0.80Sb0.20 epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition. The island-like defects were found on the substrate surface pretreated chemically. With the growth process going, these island-like defects could be buried by the epilayer. In the initial stage, two-dimensional-growth-mode was followed. When the epilayer thickness reached 70nm, three-dimensional (3D)-growth-mode occurred and the perfect 3D islands were observed.
GAO Chun-xiao;LI Shu-wei;YANG Jie;LIU Bing-bing. Atomic Force Microscopy on the Ga0.l6In0.84As0.80Sb0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition[J]. 中国物理快报, 1998, 15(10): 724-726.
GAO Chun-xiao, LI Shu-wei, YANG Jie, LIU Bing-bing. Atomic Force Microscopy on the Ga0.l6In0.84As0.80Sb0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition. Chin. Phys. Lett., 1998, 15(10): 724-726.
1998, Vol. 15 
