Chin. Phys. Lett.  2012, Vol. 29 Issue (12): 127301    DOI: 10.1088/0256-307X/29/12/127301
Analysis of Off-State Leakage Current Characteristics and Mechanisms of Nanoscale MOSFETs with a High-k Gate Dielectric
LIU Hong-Xia, MA Fei**
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071
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LIU Hong-Xia, MA Fei 2012 Chin. Phys. Lett. 29 127301
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Abstract The off-state leakage current characteristics of nanoscale channel metal-oxide-semiconductor field-effect transistors with a high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components: the gate leakage current, the source leakage current, and the substrate leakage current. The influences of the fringing-induced barrier lowering effect and the drain-induced barrier lowering effect on each component are investigated separately. For nanoscale devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current.
Received: 08 June 2012      Published: 04 March 2013
PACS:  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.61.Ng (Insulators)  
  73.22.-f (Electronic structure of nanoscale materials and related systems)  
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LIU Hong-Xia
MA Fei
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