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Stress Analysis of ZnO Film with a GaN Buffer Layer on Sapphire Substrate |
| CUI Jun-Peng1,2;WANG Xiao-Feng1,2;DUAN Yao1,2;HE Jin-Xiao1,2;ZENG Yi-Ping 1,2 |
| 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences， Beijing 100083 |
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CUI Jun-Peng, WANG Xiao-Feng, DUAN Yao et al 2008 Chin. Phys. Lett. 25 2277-2280 |
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Abstract A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half
maximum of ZnO (0002) ω-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction θ-2θ scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO
film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film.
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| Keywords:
81.15.Hi
61.14.Hg
61.14.Lj
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Received: 28 January 2008
Published: 31 May 2008
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