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Doped Polycrystalline 3C-SiC Films Deposited by LPCVD for Radio-Frequency MEMS Applications |
| ZHAO Yong-Mei1,2;SUN Guo-Sheng1;NING Jin2;LIU Xing-Fang1;ZHAO Wan-Shun1;WANG Lei1;LI Jin-Min1 |
| 1Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832State Key Laboratories of Transducer Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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ZHAO Yong-Mei, SUN Guo-Sheng, NING Jin et al 2008 Chin. Phys. Lett. 25 2269-2272 |
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Abstract Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC
growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100nm, and the rms roughness is 20nm (AFM 5×5μm images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on
SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.
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81.05.Zx
81.15.Gh
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Received: 21 November 2007
Published: 31 May 2008
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| PACS: |
81.05.Zx
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(New materials: theory, design, and fabrication)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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