| Original Articles |
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A Novel Kind of Transverse Micro-Stack High-Power Diode Bars |
| ZHANG Lei1,2;CUI Bi-Feng1;LI Jian-Jun1;GUO Wei-Lling1;WANG Zhi-Qun1;SHEN Guang-Di1 |
| 1Opto-Electronic Technology Laboratory, Beijing University of Technology, Beijing 1000222Beijing Institute of Tracking and Telecommunication Technology, Beijing 100094 |
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| Cite this article: |
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ZHANG Lei, CUI Bi-Feng, LI Jian-Jun et al 2008 Chin. Phys. Lett. 25 1284-1286 |
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Abstract Novel transverse micro-stack semiconductor laser bars are put forward to improve the output optical power of semiconductor laser bars at low injection current. More importantly, the novel laser bars have a coupled large optical
cavity, which can overcome the problem of catastrophic optical damage and improve light beam quality due to the coherently coupled emitting along the transverse direction. The micro-stack tunnel regeneration tri-active region laser structure was grown by metal organic chemical vapour deposition. For a weakly coupled uncoated device, the optical power exceeds 60W under 50A driving current and the slope efficiency reaches 1.55W/A. Further experiments show that the perpendicular divergence of 23° is achieved from transverse
strongly coupled devices.
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| Keywords:
42.55.Px
71.55.Eq
85.60.Bt
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Received: 30 July 2007
Published: 31 March 2008
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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71.55.Eq
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(III-V semiconductors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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[2] Wolff D, Bonati G, Hennig P and Voelckel H 2005 Proc.SPIE 5711 66
[3] Lian P, Yin T, Gao G, ZOU D S, Chen C H, Li J J and Shen GD 2000 Acta Phys. Sin. 49 2374 (in Chinese)
[4] Li J J ,Han J, Deng J, Cui B F, Lian P, Zou D S and Shen GD 2006 Acta Opt. Sin. 26 1819 (in Chinese)
[5] Cui B F, Li J J, Zou D S, Lian P, Han J R, Wang D F, Du JY, Liu Y, Zhao H M and Shen G D 2004 Acta Phys. Sin. 532150 (in Chinese) |
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