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Nitrogen Dioxide Sensing Properties and Mechanism of Copper Phthalocyanine Film |
| QIU Cheng-Jun1,2, DOU Yan-Wei2, ZHAO Quan-Liang1, QU Wei2, YUAN Jie3, SUN Yan-Mei2, CAO Mao-Sheng1 |
| 1School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 1000812Laboratory of Integrated Circuit, Heilongjiang University, Harbin 1500803College of Information Engineering, Central University for Nationalities, Beijing 100081 |
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| Cite this article: |
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QIU Cheng-Jun, DOU Yan-Wei, ZHAO Quan-Liang et al 2008 Chin. Phys. Lett. 25 3590-3592 |
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Abstract Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from 0ppm to 100ppm. However, the sensitivity nearly keeps a constant of 0.158 between 30ppm and 70ppm. The best working temperature of the gas sensor is 90°C for NO2 gas concentrations of 10ppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor.
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| Keywords:
07.07.Df
73.61.Ph
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Received: 25 May 2008
Published: 26 September 2008
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| PACS: |
07.07.Df
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(Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing)
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73.61.Ph
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(Polymers; organic compounds)
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[1] Jensen P J, Bennemann K H 2006 Surf. Sci. Rep. 61 129
[2] Duan Z X, Yuan J, Zhao Q L, Liu H M, Lin H B et al 2008 Chin. Phys. Lett. 25 1472
[3] Liu H M, Zhao Q L, Qiu C J and Cao M S 2008 Key Eng.Mater. 368-372 223
[4] Zhang H J and Qiu C J 2006 Mater. Sci. Eng. A 438-440 1106
[5] Wojdyla M, Bala W, Derkowska B, Rebarz M and Korcala A2008 Opt. Mater. 30 734
[6] Clemens W, Fix W, Ficker J, Knobloch A and Ullmann A 2004 J. Mater. Res. 19, 1963
[7] Jakubik W P, Urbanczyk M W, Kochowski S and Bodzenta J2003 Sens. Actuators B 96 321
[8] Fernandez-Sanchez J F, Fernandez I, Steiger R et al 2007 Adv. Fun. Mater. 17 1188
[9] Qiu C J, Zuo X, Sun Y M and Kong S S 2006 Chin. J.Sci. Instrum. 27 1608
[10] Qiu C J, Zuo X, Liu X et al 2006 IEEE Int. Con.Inform. Acqu. 12 1316
[11] Heutz S, Mitra C, Wu W, Fisher A~J, Kerridge A et al 2007 Adv. Mater. 19 3618
[12] Mashazi P N, Westbroek P, Ozoemena K I and Nyokong T 2007 Electroch. Acta 53 1858
[13] Kumar RSS, Rao S V, Giribabu L et al 2007 Chem.Phys. Lett. 447 274
[14] Chen Y L, Li R J, Wang R M et al 2007 Langmuir 23 12549
[15] Muzikante I, Parra V, Dobulans R et al 2007 Sensor 7 2984
[16] Bouvet M, Guillaud G, Leroy A, et al 2001 SensorsActuators B 73 63
[17] Palaniappan A, Moochhala S, Tay F E H, Su X D et al 2008 Sensors Actuators B 129 184
[18] Butler l S and Furbacher R J 1985 J. Chem. Edu. 62 335
[19] LiangY X, Chen Y J and Wang T H 2004 Appl. Phys.Lett. 85 666 |
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