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Evolution of Ge and SiGe Quantum Dots under Excimer Laser Annealing |
| HAN Gen-Quan1;ZENG Yu-Gang1;YU Jin-Zhong1;CHENG Bu-Wen1;YANG Hai-Tao2 |
| 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000832Tsinghua-Foxconn Nanotechnology Research Center, Department of Physics, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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HAN Gen-Quan, ZENG Yu-Gang, YU Jin-Zhong et al 2008 Chin. Phys. Lett. 25 242-245 |
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Abstract We present different relaxation mechanisms of Ge and SiGe quantum dots
under excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no interface between the Ge dots and the Ge layer, while the SiGe dots on Si0.77Ge0.23 film relax by lattice distortion to coherent dots, which results from the obvious interface between the SiGe dots and the
Si0.77Ge0.23 film. The results are suggested and sustained by Vanderbilt and Wickham's theory, and also demonstrate that no bulk diffusion occurs during the excimer laser annealing.
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| Keywords:
68.65.Hb
68.35.Fx
68.35.Md
68.37.Ps
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Received: 15 September 2007
Published: 27 December 2007
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| PACS: |
68.65.Hb
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(Quantum dots (patterned in quantum wells))
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68.35.Fx
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(Diffusion; interface formation)
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68.35.Md
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(Surface thermodynamics, surface energies)
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68.37.Ps
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(Atomic force microscopy (AFM))
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