| Original Articles |
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Influence of Different Interlayers on Growth Mode and Properties of InN by MOVPE |
| ZHANG Ri-Qing;LIU Xiang-Lin;KANG Ting-Ting;HU Wei-Guo;YANG Shao-Yan;JIAO Chun-Mei;ZHU Qing-Sheng |
| Key Laboratory of Material Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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ZHANG Ri-Qing, LIU Xiang-Lin, KANG Ting-Ting et al 2008 Chin. Phys. Lett. 25 238-241 |
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Abstract We grow InN epilayers on different interlayers by metal organic vapour phase epitaxy (MOVPE) method, and investigate the effect of interlayer on the properties and growth mode of InN films. Three InN samples were deposited on nitrided sapphire, low-temperature InN (LT-InN) and high-temperature GaN (HT-GaN), respectively. The InN layer grown directly on nitrided sapphire owns the narrowest x-ray diffraction rocking curve (XRC) width of 300 arcsec among the three samples, and demonstrates a two-dimensional (2D) step-flow-like lateral growth mode, which is much different from the three-dimensional (3D) pillar-like growth mode of LT-InN and HT-GaN buffered samples. It seems that mismatch tensile strain is helpful for the lateral epitaxy of InN film, whereas compressive strain promotes the vertical growth of InN films.
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| Keywords:
68.55.Ac
81.05.Ea
81.15.Gh
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Received: 09 May 2007
Published: 27 December 2007
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| PACS: |
68.55.Ac
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81.05.Ea
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(III-V semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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