| Original Articles |
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Electroluminescence of Si Nanocrystal-Doped SiO2 |
| CHEN Dan;XIE Zhi-Qiang;WU Qian;ZHAO You-Yuan;LU Ming |
| The State Key Laboratory for Advanced Photonic Materials and Devices, and Department of Optical Science and Engineering, Fudan University, Shanghai 200433 |
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| Cite this article: |
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CHEN Dan, XIE Zhi-Qiang, WU Qian et al 2007 Chin. Phys. Lett. 24 2390-2393 |
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Abstract We perform a comparative study on the electroluminescence (EL) and
photoluminescence (PL) of Si nanocrystal-doped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL
spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.
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| Keywords:
78.55.-m
73.63.Bd
78.68.+m
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Received: 30 March 2007
Published: 25 July 2007
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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73.63.Bd
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(Nanocrystalline materials)
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78.68.+m
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(Optical properties of surfaces)
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