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High-Power Diode-Side-Pumped Intracavity-Frequency-Doubled Continuous Wave 532nm Laser |
| ZHANG Yu-Ping1,2;ZHANG Hui-Yun2;ZHONG Kai2;LI Xi-Fu2;WANG Peng2;YAO Jian-Quan2 |
| 1College of Science, Shandong University of Science and Technology, Qingdao 2665102Key Laboratory of Optoelectrics Information Science and Technology (Ministry of Eduction), Institute of Laser and Optoelectronics, College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 |
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| Cite this article: |
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ZHANG Yu-Ping, ZHANG Hui-Yun, ZHONG Kai et al 2007 Chin. Phys. Lett. 24 2242-2244 |
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Abstract An efficient and high-power diode-side-pumped cw 532nm green laser based on a V-shaped cavity geometry, and capable of generating 22.7W green radiation with optical conversion efficiency of 8.31%, has been demonstrated. The laser is operated with rms noise amplitude of less than 1% and with M2-parameter of about 6.45 at the top of the output power. This laser has the potential for scaling to much higher output power.
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| Keywords:
42.55.Xi
42.55.Rz
42.60.Pk
42.65.Lh
42.65.Ky
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Received: 09 May 2007
Published: 25 July 2007
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| PACS: |
42.55.Xi
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(Diode-pumped lasers)
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.60.Pk
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(Continuous operation)
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42.65.Lh
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42.65.Ky
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(Frequency conversion; harmonic generation, including higher-order harmonic generation)
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[8] Sungman L, Mijeong Y, Hyun S K, Byung He C and Sungsoo S 2002 Appl. Opt. 41 1082 |
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