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Light-Induced Domain Inversion in Mg-Doped near Stoichiometric Lithium Niobate Crystals |
| LIU Hong-De;KONG Yong-Fa;HU Qian;WU Ri-Wen;WANG Wen-Jie;LI Xiao-Chun;CHEN Shao-Lin;LIU Shi-Guo;XU Jing-Jun |
| The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457 |
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| Cite this article: |
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LIU Hong-De, KONG Yong-Fa, HU Qian et al 2007 Chin. Phys. Lett. 24 1720-1723 |
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Abstract We investigate the influence of visible light on domain inversion in Mg-doped near stoichiometric lithium niobate crystals and find that the switching electric field decreases about 70% above a threshold light intensity. This effect helps us optically control domain switching and produce bulk domain structures on the micrometre scale. Finally, we introduce a model of photo-induced carriers to explain the origin of the reduction of switching electric field.
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| Keywords:
77.80.Dj
77.80.Fm
77.84.Dy
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Received: 16 November 2006
Published: 17 May 2007
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