| Original Articles |
|
|
|
|
Low-Threshold High-Temperature Operation of ～7.4μm Quantum Cascade Lasers |
| LI Lu;LIU Feng-Qi;SHAO Ye;LIU Jun-Qi;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
|
| Cite this article: |
|
LI Lu, LIU Feng-Qi, SHAO Ye et al 2007 Chin. Phys. Lett. 24 1577-1579 |
|
|
|
Abstract We report low-threshold high-temperature operation of 7.4μm strain-compensated InGaAs/InAlAs quantum cascade lasers (QCLs). For an
uncoated 22-μm-wide and 2-mm-long laser, the low-threshold current
densities, i.e. 0.33kA/cm2 at 81K in pulsed mode and 0.64kA/cm2 at 84K in cw mode, are realized. High-temperature operation of uncoated devices, with a high value of 223K, is achieved in cw mode.
|
| Keywords:
42.55.Px
71.55.Eq
85.60.Bt
|
|
|
Received: 15 February 2007
Published: 17 May 2007
|
|
| PACS: |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
| |
71.55.Eq
|
(III-V semiconductors)
|
| |
85.60.Bt
|
(Optoelectronic device characterization, design, and modeling)
|
|
|
|
|
|
[1] Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U, Ilegems M,Gini E and Melchior H 2002 Science 295 301
[2] Evans A, Yu J S, David J, Doris L, Mi K, Slivken S and Razeghi M2004 Appl. Phys. Lett. 84 314
[3] Yu J S, Slivken S, Evans A, Darvish S R, Nguyen J and Razeghi M2006 Appl. Phys. Lett. 88 091113
[4] Lu X Z, Liu F Q, Liu J Q, Jin P and Wang Z G 2005 Chin. Phys.Lett. 22 3077
[5] Guo Y, Liu F Q, Liu J Q, Li C M and Wang Z G 2005 Semicond.Sci. Technol. 20 844
[6] Liu J Q, Liu F Q, Lu X Z, Guo Y and Wang Z G 2005 Physica E 30 21
[7] Yu J S, Evans A, David J, Doris L, Slivken S and Razeghi M 2004 IEEE Photon. Technol. Lett. 16 747
[8] Faist J, Tredicucci A, Capasso F, Sirtori C, Sivco D L, BailargeonJ N, Hutchinson A L and Cho A Y 1998 IEEE J. Quantum Electron. 34 336 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
