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Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD |
| YU Tong-Jun;KANG Xiang-Ning;PAN Yao-Bo;QIN Zhi-Xin;CHEN Zhi-Zhong;YANG Zhi-Jian;ZHANG Guo-Yi |
| 1Research Center for Wide Band Gap Semiconductors, Peking University, 1008712State Key Laboratory of Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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YU Tong-Jun, KANG Xiang-Ning, PAN Yao-Bo et al 2007 Chin. Phys. Lett. 24 1365-1367 |
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Abstract InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peak
positions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AlInGaN MQWs from those of samples with substrates. Different
changes in Raman scattering spectra and HR-XRD (0002) profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AlInGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AlInGaN quantum wells.
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78.55.Cr
78.67.De
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Received: 01 January 1900
Published: 23 April 2007
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