| Original Articles |
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Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si (111) Studied by RBS/Channelling and HRXRD |
| DING Zhi-Bo;WANG Kun;ZHOU Sheng-Qiang;CHEN Tian-Xiang;YAO Shu-De |
| Department of Technical Physics, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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DING Zhi-Bo, WANG Kun, ZHOU Sheng-Qiang et al 2007 Chin. Phys. Lett. 24 831-834 |
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Abstract Rutherford backscattering (RBS)/channelling and high resolution x-ray diffraction (HRXRD) have been used to characterize the tetragonal distortion of a GaN epilayer with four AlxGa 1-x N and single AlN buffer layers grown on a Si (111) substrate by metal-organic vapour phase epitaxy (MOVPE). The results show that a 1000nm GaN epilayer with a perfect crystal quality (χmin=1.54%) can be grown on the Si (111) substrate in virtue of multiple buffer layers. Using the RBS/channelling angular scan around an off-normal <1 213> axis in the (1010) plane and the conventional HRXRD θ-2θ scans normal to GaN (0002) and (1122) planes at the 0° and 180° azimuth angles, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer and different buffer layers, can be obtained respectively. The two experiments are testified at one result, the tetragonal distortion of GaN epilayer is nearly to a fully relaxed (eT=0).
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| Keywords:
81.05.Ea
82.80.Yc
61.10.Nz
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Received: 06 September 2006
Published: 08 February 2007
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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61.10.Nz
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