Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE

Chin. Phys. Lett.

2007, Vol. 24

Issue (3): 822-824 DOI:

Original Articles

Columnar Structures and Stress Relaxation in Thick GaN Films Grown on Sapphire by HVPE

WEI Tong-Bo;MA Ping;DUAN Rui-Fei;WANG Jun-Xi;LI Jin-Min;ZENG Yi-Ping

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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WEI Tong-Bo, MA Ping, DUAN Rui-Fei et al 2007 Chin. Phys. Lett. 24 822-824

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Abstract Thick GaN films with high quality are directly grown on sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The optical and structural properties of large scale columnar domains near the interface are studied using cathodoluminescence and micro-Raman scattering. These columnar domains show a strong emission intensity due to extremely high free carrier concentration up to 2×10¹⁹cm^-3, which are related with impurities trapped in structural defects. The compressive stress in GaN film clearly decreases with increasing distance from interface. The quasi-continuous columnar domains play an important role in the stress relaxation for the upper high quality layer.

Keywords: 78.30.Fs 81.15.Kk 63.20.Dj 78.60.Hk

Received: 05 September 2006 Published: 08 February 2007

PACS:	78.30.Fs	(III-V and II-VI semiconductors)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)
	63.20.Dj
	78.60.Hk	(Cathodoluminescence, ionoluminescence)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2007/V24/I3/0822

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	WEI Tong-Bo
	MA Ping
	DUAN Rui-Fei
	WANG Jun-Xi
	LI Jin-Min
	ZENG Yi-Ping

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