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Analysis of Temperature Dependence of Silicon-on-Insulator Thermo-Optic Attenuator |
| LI Yun-Tao;YU Jin-Zhong;CHEN Yuan-Yuan; SUN Fei;CHEN Shao-Wu |
| State Key Laboratory on Integrated Optoelectronics, Institute of emiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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LI Yun-Tao, YU Jin-Zhong, CHEN Yuan-Yuan et al 2007 Chin. Phys. Lett. 24 465-467 |
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Abstract The temperature dependence of silicon-on-insulator thermo-optic attenuators is analysed, which originates from the temperature dependence of characteristics of multimode interference. The attenuator depth and power consumption are independent of temperature while the insertion loss depends on the temperature heavily. The variation of the insertion loss decreases from 4.3dB to 1dB as the temperature increases from 273K to 343K.
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| Keywords:
42.88.+h
42.82.Et
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Received: 14 September 2006
Published: 24 February 2007
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| PACS: |
42.88.+h
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(Environmental and radiation effects on optical elements, devices, and systems)
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42.82.Et
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(Waveguides, couplers, and arrays)
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