| Original Articles |
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Effect of Crucibles on Qualities of Self-Seeded Aluminium Nitride Crystals Grown by Sublimation |
| HAN Qi-Feng,DUAN Cheng-Hong;QIU Kai;JI Chang-Jian;LI Xin-Hua;ZHONG Fei;YIN Zhi-Jun;CAO Xian-Cun;ZHOU Xiu-Ju;WANG Yu-Qi |
| Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 |
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| Cite this article: |
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HAN Qi-Feng, DUAN Cheng-Hong, QIU Kai et al 2007 Chin. Phys. Lett. 24 3555-3558 |
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Abstract Self-seeded aluminium nitride (AlN) crystals are grown in tungsten and hot pressed boron nitride (HPBN) crucibles with different shapes by a sublimation method. The qualities of the AlN crystals are characterized by high-resolution
transmission electronic microscopy (HRTEM), scanning electron microscopy (SEM) and Micro-Raman spectroscopy. The results indicate that the better quality crystals can be collected in conical tungsten crucible.
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| Keywords:
81.10.Bk
81.05.Ea
81.10.Aj
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Received: 19 July 2007
Published: 03 December 2007
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| PACS: |
81.10.Bk
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(Growth from vapor)
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81.05.Ea
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(III-V semiconductors)
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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[1] Miyanaga M, Mizuhara N, Fujiwara S, Shimazu M, Nakahata H andKawase T 2007 J. Cryst. Growth 300 13
[2] Herro Z G, Zhuang D, Schlesser R, Collazo R and Sitar Z 2006 J. Cryst. Growth 286 205
[3] Gu Z, Du L, Edgar J H, Nepal N, Lin J Y, Jiang H X and Witt R 2006 J. Cryst. Growth 297 105
[4] Yakimova R, Kakanakova-Georgieva A, Yazdi G R, Gueorguiev G K andSyv\"aj\"arvi M 2005 J. Cryst. Growth 281 81
[5] Davies J and Simpson P 1979 Induction HeatingHandbook (New York: McGraw-Hill) chap 12 p 396
[6] Zhuang D, Edgar J H, Strojek B, Chaudhuri J and Rek Z 2004 J. Cryst. Growth 262 89
[7] Epelbaum B M, Seitzb C, Magerlb A, Bickermanna M and Winnacke A2004 J. Cryst. Growth 265 577
[8] Epelbaum B M, Heimann P, Bickermann M and Winnacker A 2005 Phys. Status Solidi C 2 2070
[9]Li J, Hu X B, Jiang S Z, Ning L N, Wang Y M, Chen X F, Xu XG, Wang J Y and Jiang M H 2006 J. Cryst. Growth 293 93
[10] Mokhov E N, Avdeev O V, Barash I S, Chemekova T Y, Roenkov A D,Segal A S, Wolfson A A, Makarov Y N, Ramm M G and Helava H 2005 J.Cryst. Growth 281 93
[11] Bai J, Huang X and Dudley M 2006 Mater. Sci. Semiconduct.Processing 9 180
[12] Shi Y, Liu B, Liu L H, Edgar J H, Payzant E A, Hayes J M andKuball M 2001 MRS Internet J. Nitride Semiconduct. Res. 6 5
[13] Kamler G, Weyher J L, Grzegory I, Jezierska E and Wosi\'nskiT 2002 J. Cryst. Growth 246 21
[14] Bickermann M, Epelbaum B M and Winnacker A 2003 Phys. StatusSolidi C 0 1993 |
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