| Original Articles |
|
|
|
|
Electrical Characterization of Metal--Insulator--Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application |
| HUANG Yu-Jian;HUANG Yue;DING Shi-Jin;ZHANG Wei;LIU Ran |
| Department of Microelectronics, Fudan University, Shanghai 200433 |
|
| Cite this article: |
|
HUANG Yu-Jian, HUANG Yue, DING Shi-Jin et al 2007 Chin. Phys. Lett. 24 2942-2944 |
|
|
|
|
Abstract Metal--insulator--metal (MIM) capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4×10-9A/cm2 at 1.8\,V and 125°C, a breakdown electric field of 2.6MV/cm as well as voltage coefficients of capacitance (VCCs) of 2110ppm/V2 and -824ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole--Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.
|
| Keywords:
73.40.Rw
52.25.Mq
77.55.+f
|
|
|
Received: 10 May 2007
Published: 20 September 2007
|
|
|
|
|
|
|
|
[1] International Technology Roadmap for Semiconductors, 2006 update,Radio Frequency and Analog/Mixed-Signal Technologies for WirelessCommunications
[2] Remmel T, Ramprasad R and Walls J 2003 Proc. Int. Rel. Phys.Symp. p 277
[3] Ding S J et al %, Huang Y J, Huang Y, Pan S H, Zhang W and Wang L K2007 Chin. Phys. 16 2803
[4] Hausmann D, Becker J, Wang S and Gordon R G 2002 Science 298 402
[5] Xu M et al %, Lu H L, Ding S J, Sun L, Zhang W and Wang L K2005 Chin. Phys. Lett. 22 2418
[6] Lu H L et al %, Li Y B, Xu M, Ding S J, Sun L, Zhang W and Wang L K2006 Chin. Phys. Lett. 23 1929
[7]Balog M and Schieber M 1977 Thin Solid Films 41 247
[8] Hu H et al %, Zhu C, Lu Y F, Li M F, Cho B J and Choi W K2002 IEEE Electron Device Lett. 23 514
[9] Yu X F et al%, Zhu C X, Hu H, Chin A, Li M F, Cho B J, Kwong D L, Foo P D and Yu M B2003 IEEE Electron Device Lett. 24 63
[10] Kim S J et al %, Cho B J, Li M F, Zhu C, Chin A and Kwong D L2003 VLSI Tech. Dig. p 77
[11] Ding S J, Zhang D W and Wang L K 2007 J. Phys. D: Appl.Phys. 40 1072
[12]Sze M 1981 Physics of Semiconductor Devices (New York:Wiley) p 402
[13] Jeong D S, Park H B and Hwang C S 2005 Appl. Phys. Lett. 86 072903
[14] Ding S J et al %, Hu H, Zhu C X, Kim S J, Yu X F, Li M F, Cho%B J, Chan D, Yu M B, Rustagi S C, Chin A and Kwong D L2004 IEEE Trans. Electron Devices 51 886 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
