Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer

Chin. Phys. Lett.

2006, Vol. 23

Issue (9): 2591-2594 DOI:

Original Articles

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates using a GaN Intermedial Layer

WANG Jian-Feng^1,2;ZHANG Bao-Shun²;ZHANG Ji-Cai²;ZHU Jian-Jun²;WANG Yu-Tian²;CHEN Jun²; LIU Wei²,JIANG De-Sheng²;YAO Duan-Zheng¹; YANG Hui²

¹Department of Physics, Wuhan University, Wuhan 430072 ²Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

Cite this article:

WANG Jian-Feng, ZHANG Bao-Shun, ZHANG Ji-Cai et al 2006 Chin. Phys. Lett. 23 2591-2594

Download: PDF(271KB)
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks

Abstract GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AlN/Si(111) substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional (3D) mode to the 2D one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy (TEM) measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.

Keywords: 81.05.Ea 81.15.Gh

Published: 01 September 2006

PACS:	81.05.Ea	(III-V semiconductors)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

TRENDMD:

URL:

https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I9/02591

Service
	E-mail this article
	E-mail Alert
	RSS
Articles by authors
	WANG Jian-Feng
	ZHANG Bao-Shun
	ZHANG Ji-Cai
	ZHU Jian-Jun
	WANG Yu-Tian
	CHEN Jun
	LIU Wei
	JIANG De-Sheng
	YAO Duan-Zheng
	YANG Hui

Related articles from Frontiers Journals

[1]	WANG Guo-Biao, XIONG Huan, LIN You-Xi, FANG Zhi-Lai, KANG Jun-Yong, DUAN Yu, SHEN Wen-Zhong. Green Emission from a Strain-Modulated InGaN Active Layer[J]. Chin. Phys. Lett., 2012, 29(6): 2591-2594
[2]	CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. Chin. Phys. Lett., 2012, 29(2): 2591-2594
[3]	SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 2591-2594
[4]	BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al₂O₃ Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 2591-2594
[5]	SONG Shi-Wei, LIANG Hong-Wei, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH₄ Pre-Treated 6H-SiC Substrates**[J]. Chin. Phys. Lett., 2012, 29(1): 2591-2594
[6]	SANG Ling, WANG Jun, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 2591-2594
[7]	LI Zhe-Yang, , HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices**[J]. Chin. Phys. Lett., 2011, 28(9): 2591-2594
[8]	DAI Ke-Hui, , WANG Lian-Shan, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 2591-2594
[9]	ZHOU Yan, WANG Hai-Long, MA Chuan-He, GONG Qian, FENG Song-Lin . Fabrication of Hinged Mirrors Using a Strain-Driven Self-Assembly Method on a GaAs Substrate**[J]. Chin. Phys. Lett., 2011, 28(7): 2591-2594
[10]	CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan, , LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 2591-2594
[11]	PAN Jian-Hai, WANG Xin-Qiang, CHEN Guang, LIU Shi-Tao, FENG Li, XU Fu-Jun, TANG Ning, SHEN Bo* . Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 2591-2594
[12]	WU Meng, , ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate**[J]. Chin. Phys. Lett., 2011, 28(6): 2591-2594
[13]	CHEN Hai-Yang, JIANG Lan, LI Da-Rang . Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction**[J]. Chin. Phys. Lett., 2011, 28(5): 2591-2594
[14]	CHEN Yao, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 2591-2594
[15]	WEI Meng, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition**[J]. Chin. Phys. Lett., 2011, 28(4): 2591-2594

Viewed

Full text

Abstract