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Multiple-State Storage Capability of Stacked Chalcogenide Films (Si16Sb33Te51/Si4Sb45Te51/Si39Sb Te50) for Phase Change Memory |
| LAI Yun-Feng1;FENG Jie1;QIAO Bao-Wei1;HUANG Xiao-Gang1;CAI Yan-Fei2;LIN Yin-Yin2;TANG Ting-Ao2;CAI Bing-Chu1;CHEN Bomy3 |
| 1National Key Laboratory of Nano/Micro Fabrication Technology, Key Laboratory for Thin Film and rofabrication Technology of Ministry of Education, Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030
2State Key Laboratory of ASIC & System, Fudan University, Shanghai 200433
3Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, USA |
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| Cite this article: |
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LAI Yun-Feng, FENG Jie, QIAO Bao-Wei et al 2006 Chin. Phys. Lett. 23 2516-2518 |
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Abstract The multiple-state storage capability of phase change memory (PCM) is confirmed by using stacked chalcogenide films as the storage medium. The current--voltage characteristics and the resistance--current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si--Sb--Te layers triggered by different amplitude currents.
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| Keywords:
61.43.Dq
85.30.De
84.37.+q
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Published: 01 September 2006
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| PACS: |
61.43.Dq
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(Amorphous semiconductors, metals, and alloys)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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