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Preparation of Cu(In,Ga)Se2 Thin Film Solar Cells by Selenization of Metallic Precursors in an Ar Atmosphere |
| XU Chuan-Ming;SUN Yun;ZHOU Lin;LI Feng-Yan; ZHANG Li;XUE Yu-Ming;ZHOU Zhi-Qiang;HE Qing |
| Institute of Photoelectronics, Nankai University, Tianjin 300071 |
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| Cite this article: |
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XU Chuan-Ming, SUN Yun, ZHOU Lin et al 2006 Chin. Phys. Lett. 23 2259-2261 |
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Abstract Cu(In,Ga)Se2 thin films are deposited on Mo-coated glass substrates by Se vapour selenization of sputtered metallic precursors in the atmosphere of Ar gas flow under a pressure of about 10Pa. The it in situ heat treatment of as-grown precursor leads to the formation of a better alloy. During selenization, the growth of CuInSe2 phase preferably proceeds through Se-poor phases as CuSe and InSe at relatively low substrate temperature of 250°C, due to the absence of In2Se3 at intermediate stage at low reactor pressure. Subsequently, the Cu(In,Ga)Se2 phase is produced by the reactive diffusion of CuInSe2 with a Se-poor GaSe phase at high temperature of up to 560°C. The final film exhibits smooth surface and large grain size. The absorber is used to fabricate a glass/Mo/Cu(In,Ga)Se2/CdS/ZnO cell with the total-area efficiency of about 7%. The low open-circuit voltage value of the cell fabricated should result from the nonuniform distribution of In and Ga in the absorber, due to the diffusion-controlled reaction during the phase formation. The films, as well as devices, are characterized.
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| Keywords:
81.05.Bx
68.55.Jk
81.15.Cd
84.60.Jt
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Published: 01 August 2006
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