| Original Articles |
|
|
|
|
Photoluminescence from Electron-Beam Deposited CeO2 Thin Film after High Temperature Thermal Annealing |
| FANG Ying-Cui1,2;ZHANG Zhuang-Jian3;SHEN Jie3;LU Ming4 |
| 1School of Vacuum Section of Mechanical and Automotive Engineering, Hefei University of Technology, Hefei 230009
2Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026
3Department of Materials Science, Fudan University, Shanghai 200433
Department of Optical Science and Engineering, and the State Key Laboratory of Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433 |
|
| Cite this article: |
|
FANG Ying-Cui, ZHANG Zhuang-Jian, SHEN Jie et al 2006 Chin. Phys. Lett. 23 1919-1922 |
|
|
|
Abstract CeOx films are deposited onto the surface of a SiO2 matrix embedded with Si nanocrystals (nc-Si/SiO2) by electron-beam evaporation of CeO2 powder in high vacuum. By tuning the thickness of the CeOx film, photoluminescence (PL) spectra centred at 330, 358, 378, 388, 400, and 450nm, respectively, are observed. It has been identified that the PL centred at 358, 388 and 400nm are from cerium silicide compounds, and those centred at 330nm, 378nm are due to Ce3 ions, while the 450nm PL is from the defects in the SiO2 matrix.
|
| Keywords:
78.55.-m
76.30.Kg
78.68.+m
|
|
|
Published: 01 July 2006
|
|
| PACS: |
78.55.-m
|
(Photoluminescence, properties and materials)
|
| |
76.30.Kg
|
(Rare-earth ions and impurities)
|
| |
78.68.+m
|
(Optical properties of surfaces)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
