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High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers |
| LIU Jun-Qi;LIU Feng-Qi;LI Lu;SHAO Ye;GUO Yu;WANG Zhan-Guo |
| Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,
PO Box 912, Beijing 100083 |
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| Cite this article: |
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LIU Jun-Qi, LIU Feng-Qi, LI Lu et al 2006 Chin. Phys. Lett. 23 1784-1786 |
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Abstract We report on the realization of GaAs/AlGaAs quantum cascade lasers with an emission wavelength of 9.1μm above the liquid nitrogen temperature. With optimal current injection window and ridge width of 24 and 60μm respectively, a peak output power more than 500mW is achieved in pulsed mode operation. A low threshold current density Jth=2.6kA/cm2 gives the devices good lasing characteristics. In a drive frequency of 1kHz, the laser operates up to 20% duty cycle.
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| Keywords:
42.55.Px
71.55.Eq
81.15.Hi
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Published: 01 July 2006
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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71.55.Eq
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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